Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

摘要

The gamma-ray irradiation effects on channel mobility (μ) and threshold voltage (V_T) for n-channel 6H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) were studied. The gate oxide of the MOSFETs was fabricated using pyrogenic oxidation and subsequent annealing in steam at 800℃ or in H_2 at 700℃. The value of μ for the MOSFETs whose gate oxide was annealed in steam and in H_2 is not changed up to 180 and 60 kGy(SiO_2), respectively. By irradiation at 530 kGy(SiO_2), the change of V_T for the MOSFETs whose gate oxide was annealed in steam and in H_2 is 0.6 V (from 2.7 to 3.3 V) and 2.2 V (from 0.9 to 3.1V), respectively.