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机译:通过热处理恢复伽玛射线辐照的SiC MOSFET的电特性
Saitama Univ., 255, Shimoohkubo, Sakuraku, Saitama, 338-8570, Japan,Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gumma, 370-1292, Japan;
Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gumma, 370-1292, Japan;
Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gumma, 370-1292, Japan;
Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gumma, 370-1292, Japan;
Sanken Electric Co., Ltd., 3-6-3, Kitano, Niiza, Saitama, 352-8666, Japan;
Sanken Electric Co., Ltd., 3-6-3, Kitano, Niiza, Saitama, 352-8666, Japan;
Sanken Electric Co., Ltd., 3-6-3, Kitano, Niiza, Saitama, 352-8666, Japan;
Saitama Univ., 255, Shimoohkubo, Sakuraku, Saitama, 338-8570, Japan;
Japan Atomic Energy Agency, 1233, Watanuki, Takasaki, Gumma, 370-1292, Japan;
Gamma-ray irradiation; MOSFET; Thermal annealing;
机译:高温下γ射线辐照导致SiC MOSFET的特性变化
机译:栅极偏置及其变化对SiC MOSFET的伽玛射线辐射电阻的影响
机译:SiC MOSFET的电机驱动器电路的伽马射线辐照响应
机译:γ射线辐射和热退火对SiC MOSFET电特性的影响
机译:6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
机译:多芯片SIC MOSFET模块多物理仿真辅助光学测量的热阻抗表征
机译:γ射线辐射对Si和SiC功率MOSFET动态特性的影响
机译:基于1200 V,100 a,200°C,4H-siC mOsFET的电源开关模块的电气和热性能