SiC MOSFET SiC MOSFETMANUFACTURING METHOD FOR SiC MOSFET INCLUDING HEAT PROCESSING TREATMENT FOR ENHANCED CRYSTALLINITY OF PILLAR STRUCTURE AND SiC MOSFET MANUFACTURED USING THE SAME

摘要

The present invention relates to a method for manufacturing a SiC MOSFET capable of filling a trench at a high rate even at room temperature using a particle impact solidification phenomenon, and to a SiC MOSFET manufactured using the method. Specifically, in the present invention, in a method of manufacturing a superjunction (SJ) structure MOSFET, forming a substrate doped with an N-type dopant, forming a drift layer on the substrate, the And forming a trench on the substrate and the drift layer, filling a powder with the formed trench to form a filler, and improving the crystallinity of the formed filler. It relates to a manufacturing method and a MOSFET manufactured using the same.