Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

摘要

The BaSIC(EMM) topology has been previously demonstrated to improve the short-circuit (SC) capability of 1.2-kV SiC power MOSFETs from 3.5 to 7.4 mu s while producing a 17% increase in the net on-state resistance. However, a SC time of 10 mu s could not be achieved. In this article, a systematic procedure for selection of the Si power MOSFET used in the BaSIC(EMM) topology is described based on information published by manufacturers of Si power MOSFETs in their datasheets. A tradeoff curve between the Si EMM drain saturation current at 150 degrees C versus its on-resistance at 25 degrees C is proposed in this article for determination of the best Si EMM product. The proposed methodology allowed identification of a superior Si EMM device. It was experimentally validated that a SC with-stand time of 11 mu s, under a gate bias of 20 V applied to the 1.2-kV SiC power MOSFET at a drain bias of 800 V, was achievable with an increase in on-resistance of only 3.6%. These experimental results demonstrate a greatly improved tradeoff curve between SC time and increase in on-resistance.