SiC MOSFET与Si MOSFET在开关电源中功率损耗的对比分析

摘要

碳化硅(SiC)MOSFET 是一种新型高压功率开关器件，具有导通电阻低、开关速度极快的特点。本文分析了功率MOSFET在开关电源中的功率损耗，以1200 V/24 A的SiC MOSFET和硅(Si)MOSFET在相同的测试条件下进行了功率损耗的对比测试。实验结果表明，在相同的驱动条件和负载条件下，SiC MOSFET的开关速度明显快于Si MOSFET，同时功率损耗明显降低，即使直接采用SiC MOSFET替代Si MOSFET也会使得开关电源的效率明显提升。%SiC MOSFET is the latest high-voltage power device and are characterized by low on-resistance and extremely fast switching speed. The effects of the power MOSFET on power losses of switching power supply were analyzed, the comparison test of SiC MOSFET and silicon MOSFET with same parameter of 1 200 V/24 A was made. The experimental results show that the switching speed of SiC MOSFET is significantly faster than that of silicon MOSFET under the same condition of driver and load, ,meanwhile, the power losses are significantly lowerd, the efficiency of switching power supply could be substantially improved and even simply replace SiC MOSFET with silicon MOSFET.