Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator

摘要

As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.