High mobility metal-oxide thin film transistors with IGZO/In

机译：具有IGZO / In的高迁移率金属氧化物薄膜晶体管

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thin layer greatly improves the electrical characteristics of the self-aligned top-gate thin film transistors. In comparison, the dual-channel TFT shows higher filed-effect mobility (34.3cm

机译：薄层极大地改善了自对准顶栅薄膜晶体管的电特性。相比之下，双通道TFT的场效应迁移率更高（34.3cm

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来源
《International Conference on Computer Aided Design for Thin-Film Transistor Technologies》|2018年|1-3|共3页
会议地点 Shenzhen(CN)
作者
Xuan Deng; Yuqing Zhang; Haishi Fu; Shengdong Zhang;
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School of Electronic and Computer Engineering Peking University Shenzhen China;

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Thin film transistors; Threshold voltage; Logic gates; Glass; Plasmas; Metals; Performance evaluation;

机译：薄膜晶体管；门槛电压；逻辑门玻璃;血浆;金属;绩效评估;

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1. Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors [J] . Kang Youngjin, Lee Woobin, Kim Jaeyoung, Materials Research Bulletin . 2021,第Jula期

机译：IGZO薄膜晶体结构对金属氧化物薄膜晶体管的电气和光稳定性的影响
2. Enhanced Subthreshold Characteristics and Operational Stability in Metal-Oxide Thin-Film Transistors Using IGZO-Capped Bilayer Channels [J] . Lee Woobin, Park Sung Kyu, Kim Yong-Hoon Science of advanced materials . 2018,第3期

机译：使用IGZO封顶的双层通道增强金属氧化物薄膜晶体管的亚阈值特性和操作稳定性
3. Advanced Energy Materials 2019 Reactive plasma processes for formation of high-mobility IGZO thin film transistors - Yuichi Setsuhara - Osaka University [J] . Yuichi Setsuhara Journal of Electrical & Electronic Systems . 2020,第5期

机译：2019年高级能源材料2019反应等离子体工艺，用于形成高流动性IGZO薄膜晶体管 - Yuichi Setsuhara - 大阪大学
4. High mobility metal-oxide thin film transistors with IGZO/In2O3 dual-channel structure [C] . Xuan Deng, Yuqing Zhang, Haishi Fu, International Conference on Computer Aided Design for Thin-Film Transistor Technologies . 2016

机译：高迁移率金属氧化物薄膜晶体管，具有IGZO / IN 2 O 3 双通道结构
5. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics. [D] . Zeumault, Andre. 2017

机译：了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
6. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors [O] . Jae Sang Heo, Seungbeom Choi, Jeong-Wan Jo, 2017

机译：用于高迁移率溶液处理的金属氧化物薄膜晶体管的频率稳定离子型混合栅极电介质
7. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors [O] . Jae Sang Heo, Seungbeom Choi, Jeong-Wan Jo, 2017

机译：用于高迁移率溶液加工金属氧化物薄膜晶体管的频率稳定离子型混合栅极电介质

High mobility metal-oxide thin film transistors with IGZO/In

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