METHOD FOR MANUFACTURING IGZO THIN FILM TRANSISTOR AND IGZO THIN FILM TRANSISTOR MANUFACTURED THEREBY

摘要

The present invention relates to a method for manufacturing an IGZO thin film transistor, which can improve the performance of the thin film transistor without performing a high-temperature heat treatment process after an IGZO thin film is formed, and an IGZO thin film transistor manufactured by the method, and more specifically, to a method for manufacturing an IGZO thin film transistor comprising: a channel layer including an IGZO thin film; a source electrode and a drain electrode positioned on the channel layer to face each other; a gate electrode applying an electric field to the channel layer; and a gate insulating layer interposed between the gate electrode and the channel layer. The IGZO thin film is formed to be treated with microwaves.;COPYRIGHT KIPO 2019