METHOD OF FORMING IGZO FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a technique for forming a film without dropping a deposition rate, and for forming a semiconductor layer that consists of IGZO (In-Ga-Zn-Oxide) that shows, when a thin film transistor (TFT) is composed, desired TFT characteristics.;SOLUTION: A method of forming an IGZO film on an object of film formation includes: a film forming step (P2, P3) for forming the IGZO film on the object by sputtering in a vacuum where a partial pressure of an oxygen gas is 0.1 Pa or less; and an annealing step (P5, P6) for annealing the IGZO film in an atmosphere that contains the oxygen gas and a nitrogen gas.;COPYRIGHT: (C)2013,JPO&INPIT