Novel low power full adder cells in 180nm CMOS technology

摘要

This paper proposes four low power adder cells using different XOR and XNOR gate architectures. Two sets of circuit designs are presented. One implements full adders with 3 transistors (3-T) XOR and XNOR gates. The other applies Gate-Diffusion-Input (GDI) technique to full adders. Simulations are performed by using Hspice based on 180 nm CMOS technology. In comparison with Static Energy Recovery Full (SERF) adder cell module, the proposed four full adder cells demonstrate their advantages, including lower power consumption, smaller area, and higher speed.