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Design of a MEMS-Based Oscillator Using 180nm CMOS Technology

机译:基于180nm CMOS技术的基于MEMS的振荡器设计

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摘要

Micro-electro mechanical system (MEMS) based oscillators are revolutionizing the timing industry as a cost effective solution, enhanced with more features, superior performance and better reliability. The design of a sustaining amplifier was triggered primarily to replenish MEMS resonator’s high motion losses due to the possibility of their ‘system-on-chip’ integrated circuit solution. The design of a sustaining amplifier observing high gain and adequate phase shift for an electrostatic clamp-clamp (C-C) beam MEMS resonator, involves the use of an 180nm CMOS process with an unloaded Q of 1000 in realizing a fixed frequency oscillator. A net 122dBΩ transimpedance gain with adequate phase shift has ensured 17.22MHz resonant frequency oscillation with a layout area consumption of 0.121 mm2 in the integrated chip solution, the sustaining amplifier draws 6.3mW with a respective phase noise of -84dBc/Hz at 1kHz offset is achieved within a noise floor of -103dBC/Hz. In this work, a comparison is drawn among similar design studies on the basis of a defined figure of merit (FOM). A low phase noise of 1kHz, high figure of merit and the smaller size of the chip has accredited to the design’s applicability towards in the implementation of a clock generative integrated circuit. In addition to that, this complete silicon based MEMS oscillator in a monolithic solution has offered a cost effective solution for industrial or biomedical electronic applications.
机译:基于微机电系统(MEMS)的振荡器正在为计时行业带来革命性的变革,成为一种经济高效的解决方案,并具有更多功能,更优越的性能和更高的可靠性。触发了维持放大器的设计主要是为了弥补MEMS谐振器的“片上系统”集成电路解决方案的高运动损耗。为静电钳夹(C-C)光束MEMS谐振器观察高增益和足够的相移的维持放大器的设计涉及在实现固定频率振荡器时使用180nm CMOS工艺,空载Q为1000。在集成芯片解决方案中,具有足够的相移的122dBΩ的净跨阻增益确保了17.22MHz的谐振频率振荡,且布局面积消耗为0.121 mm 2 ,维持放大器的功耗为6.3mW,相位噪声为在-103dBC / Hz的本底噪声内,在1kHz偏移下达到-84dBc / Hz。在这项工作中,基于定义的品质因数(FOM)对相似的设计研究进行了比较。 1kHz的低相位噪声,较高的品质因数和较小的芯片尺寸已证明该设计在实现时钟生成集成电路方面的适用性。除此之外,这种完整的单芯片解决方案中基于硅的MEMS振荡器为工业或生物医学电子应用提供了经济高效的解决方案。

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