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Power efficient voltage controlled oscillator design in 180nm CMOS technology

机译:采用180nm CMOS技术的省电高效压控振荡器设计

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In this paper, four different single ended delay cells based ring oscillators have been presented. Output frequencies of ring oscillators have been controlled by varying the supply voltage 1.4V to 3.0V. The active load concept has been used in proposed circuits. First design shows frequency variation in the range [4.50-1.40] GHz with phase noise -87.79dBc/Hz @1MHz in saturated load. Second design shows frequency variation of [6.26-2.85] GHz with pseudo-NMOS logic. Third design shows frequency variation in the range [4.54-0.77] GHz with phase noise -85.38dBc/Hz @1MHz and tuning range of 141.8% in unsaturated load. Fourth design shows frequency variation of [2.66-2.38] GHz with linear load. Simulations have been performed using SPICE based on 180nm CMOS technology at 1.8V. The proposed designs of 3-Stage, 5-Stage, 7-Stage have been compared with previous work for frequency and power consumption, phase noise, tuning range. Proposed methods show the improvement with low power consumption, low phase noise and wide tuning range.
机译:在本文中,提出了四种不同的基于环形振荡器的单端延迟单元。环形振荡器的输出频率已通过将电源电压从1.4V更改为3.0V来控制。主动负载概念已用于建议的电路中。第一个设计显示了在[4.50-1.40] GHz范围内的频率变化,在饱和负载下,相位噪声为-87.79dBc / Hz @ 1MHz。第二种设计显示了使用伪NMOS逻辑的[6.26-2.85] GHz频率变化。第三种设计显示频率变化在[4.54-0.77] GHz范围内,相位噪声为-85.38dBc / Hz @ 1MHz,在非饱和负载下的调谐范围为141.8%。第四个设计显示了线性负载下[2.66-2.38] GHz的频率变化。使用基于180nm CMOS技术的SPICE在1.8V下进行了仿真。拟议的3级,5级,7级设计已与以前的工作进行了频率和功耗,相位噪声,调谐范围的比较。所提出的方法显示出低功耗,低相位噪声和宽调谐范围的改进。

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