Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Belarusian State University, Minsk 220050, Belarus;
Belarusian State University, Minsk 220050, Belarus;
Belarusian State University, Minsk 220050, Belarus;
State Scientific and Production Association "Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus", Minsk 220072, Belarus;
I3N, Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal;
Department of Mathematics, Lulea University of Technology, Lulea S-97187, Sweden;
School of Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom;
Ge:Sn; tin-vacancy defects; energy levels; ab-initio modeling;
机译:掺锡锗晶体中的辐射诱导缺陷反应
机译:铜污染的Cz-Si晶体中的辐射诱导缺陷反应
机译:铜污染的Cz-Si晶体中的辐射诱导缺陷反应
机译:辐射诱导的锡掺杂Ge晶体中的缺陷反应
机译:稀土掺杂氟化钇钇锂激光主体材料的晶体生长和辐射诱导缺陷。
机译:多晶铁单晶中辐射致缺陷的X射线微衍射分析
机译:Cu污染的Cz-si晶体中辐射诱导的缺陷反应
机译:激光诱导缺陷反应控制KDp和DKDp晶体的损伤性能