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Method of Manufacturing Semiconductor Devices Including Generating and Annealing Radiation-Induced Crystal Defects
Method of Manufacturing Semiconductor Devices Including Generating and Annealing Radiation-Induced Crystal Defects
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机译:包括产生和退火辐射诱发的晶体缺陷的半导体器件的制造方法
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摘要
The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a dissociation temperature at which the auxiliary crystal defects transform into defect complexes, which may be electrically inactive. Then protons may be implanted into the semiconductor substrate to induce the generation of radiation-induced main crystal defects. The defect complexes may enhance the efficiency of the formation of particle-related dopants based on the radiation-induced main crystal defects.
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