A method of manufacturing semiconductor devices comprising generating and annealing of radiation-induced crystal defects

摘要

The production of auxiliary crystal defects (212), in a semiconductor substrate (500) is induced. Then, the semiconductor substrate (500) at a temperature above a dissociation temperature of advance cured, in which the auxiliary crystal defects (212) in the defect complex (219) are transformed, which can be electrically inactive. Then, protons in the semiconductor substrate (500) are implanted, the production of radiation-induced main crystal defects (222) to induce. The defect complex (219), the effectiveness of the formation of particles correlated dopants due to the radiation-induced main crystal defects (222) increase.