AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

机译：使用直接生长的氧化物层的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管

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N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage curr

机译：N作为AlGaN / GaN金属氧化物半导体高电子迁移率晶体管（MOS-HEMT）的绝缘膜。栅极泄漏电流

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《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on》|2007年|P.275-278|共4页
会议地点 TainanTaiwan
作者
Li-Hsien Huang; Ya-Lan Ciou; Shu-Hao Yeh; Ching-Ting Lee;
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high electron mobility transistors; leakage currents; gate leakage current; insulation film; metal-oxide-semiconductor high electron mobility transistors; photoelectrochemical oxidation method; MOS-HEMTs; PEC; f; f;

机译：高电子迁移率晶体管；漏电流栅极漏电流；绝缘膜金属氧化物半导体高电子迁移率晶体管；光电化学氧化法MOS-HEMT； PEC; F; F;

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1. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System [J] . Lee Hsin-Ying, Chang Ting-Wei, Lee Ching-Ting Journal of Electronic Materials . 2021,第6期

机译：AlGaN / GaN金属氧化物 - 半导体高电子迁移率使用蒸汽冷却冷凝系统生长的Ga2O3栅极介电层的高电子迁移率晶体管
2. High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method [J] . Li-Hsien Huang, Su-Hao Yen, Ching-Ting Lee Applied Physicsletters . 2008,第4期

机译：光电化学氧化法生长栅绝缘子的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管的高频和低频噪声
3. Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack [J] . Lee, Ching-Ting, Chiou, Applied Physics Letters . 2013,第8期

机译：具有氧化层/ Ta2O5 / Al2O3栅介电叠层的光电化学氧化处理AlGaN / GaN金属氧化物半导体高电子迁移率晶体管
4. AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer [C] . Huang Li-Hsien, Ciou Ya-Lan, Yeh Shu-Hao, IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：AlGaN / GaN金属氧化物半导体高电子迁移率晶体管使用直接生长的氧化物层
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating [O] . Xinke Liu, Youming Lu, Wenjie Yu, -1

机译：具有极化P（VDF-TrFE）铁电聚合物门控的AlGaN / GaN金属氧化物半导体高电子迁移率晶体管
7. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating [O] . Xinke Liu, Youming Lu, Wenjie Yu, 2015

机译：AlGaN / GaN金属氧化物半导体高电子迁移率晶体管，具有偏振P（VDF-TRFE）铁电聚合物门控

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

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