The Impact of High-voltage Drift N-well and Shallow Trench Isolation Layouts on Electrical Characteristics of LDMOSFETs

机译：高压漂移N阱和浅沟槽隔离布局对LDMOSFET电气特性的影响

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The impact of the high-voltage drift n- well (HVNW) and shallow trench isolation (STI) regions on the electrical characteristics of 32V symmetry and asymmetry n-channel laterally diffused drain MOSFET (N-LDMOS) were evaluated. Asymmetry structure has high

机译：评估了高压漂移n阱（HVNW）和浅沟槽隔离（STI）区域对32V对称和不对称n沟道横向扩散漏极MOSFET（N-LDMOS）的电特性的影响。不对称结构具有很高的

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《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on》|2007年|P.267-270|共4页
会议地点 TainanTaiwan
作者
Huang; C.T.; Bing-Yue Tsui; Hsu-Ju Liu; Geeng-Lih Lin;
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hot carriers; integrated circuit layout; power MOSFET; semiconductor device breakdown; semiconductor device reliability; LDMOSFET; asymmetry n-channel laterally diffused drain MOSFET; boron near source region; breakdown voltage; electrical characteristics; high-vo;

机译：热载体；集成电路布局；功率MOSFET;半导体器件击穿；半导体器件的可靠性； LDMOSFET;非对称n沟道横向扩散漏极MOSFET;硼源区附近；击穿电压;电气特性;高音量;

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2. Impact of radical oxynitridation on characteristics & reliability of sub-1.5 nm-thick gate-dielectric FETs with narrow channel and shallow trench isolation [J] . Mitsuhiro Togo, Koji Watanabe, Masayuki Terai, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001,第571期

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3. Electrical Characteristics of a High-voltage P-channel LDMOSFET Utilizing SOI Technology [J] . Hoon-Soo PARK, Jin-Gun KOO, Sang-Gi KIM, Journal of the Korean Physical Society . 2009,第3aPta1期

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4. The Impact of High-voltage Drift N-well and Shallow Trench Isolation Layouts on Electrical Characteristics of LDMOSFETs [C] . C. T. Huang, Bing-Yue Tsui, Hsu-Ju Liu, IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：高压漂移N阱和浅沟槽隔离布局对LDMOSFET的电气特性的影响
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The Impact of High-voltage Drift N-well and Shallow Trench Isolation Layouts on Electrical Characteristics of LDMOSFETs

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