Device Degradation and Defects in GaAs

摘要

This paper describes degradation behavior and factors of heterojunction bipolar transistors of the GaAs/AlGaAs system. Impurity-related degradation and point-defect-related degradation are discussed. Hydrogen is found to be a typical example of the impurity-related factor. We propose that intrinsic and extrinsic Frenkel-pair generation induced by surface-Fermi-level-pinning are the most probable mechanism for incorporating degradation factors related to point defects in heavily doped n-type and p-type layers.