laser with a (P) InGaAs quantum wells with an indium InGaP barrier layer degradation was reduced

摘要

A method of preparing a VCSEL, this method, the active region on the opposite side of the step of growing the conductive area of ​​the first mirror on the first region, and the mirror region of the first conductive region of the first A step of growing the _transition with the process of growing the quantum well barrier having _(a) In _1-x Ga _x P a (As), one or more of the GaAs (b) GaP, or GaAsP, Another is a process of growing the _layer, the process of growing the quantum well layer with a _(c) In _1-z Ga z As _{y P 1-y,} and one or more of the GaAs (d) GaP, or GaAsP, a quantum well barrier with _(f) In _1-x Ga _x P (As) is a process of growing a transition layer, and the process repeats over multiple cycles of the process up to (d) (e) (a) to It is possible to use MBE for, growing a conductive region of the second opposite side step including a process of growing, to the conducting region of the first over the active region. However, in the range of 0.77 to 0.50 to x, in the range from 1 0.7 to y, in the range of 0.7 to 0.99 to z.