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Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

机译：具有InGaAsP过渡层的无铝InGaAs / GaAs / InGaP应变量子阱激光器

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Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm/sup -1/.

机译：报道了特征温度为170 K的无铝InGaAs / GaAs / InGaP应变量子阱激光器。具有InGaAsP过渡层的分裂激光器显示出内部量子效率为87％，内部波导损耗为6.33 cm / sup -1 /。

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《》|1994年|P.121-122|共2页
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Hung-Pin Shiao; Wei Lin;
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中图分类无线电电子学、电信技术;
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专利

1. 980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers [J] . Ohkubo M., Ijichi T. IEEE Journal of Quantum Electronics . 1994,第2期

机译：980 nm无铝InGaAs / InGaAsP / InGaP GRIN-SCH SL-QW激光器
2. Advantages of InGaAsP separate confinement layer in 0.98 mu m InGaAs/GaAs/InGaP strained DOW lasers for high power operation at high temperature [J] . Sagawa M., Hiramoto K. Electronics Letters . 1992,第17期

机译：0.98μmInGaAs / GaAs / InGaP应变DOW激光器中InGaAsP隔离限制层的优势，可在高温下进行大功率操作
3. Temperature dependence of 2 mu m strained-quantum-well InGaAs/InGaAsP/InP diode lasers [J] . Martinelli R.U., Menna R.J. Electronics Letters . 1994,第4期

机译：2μm应变量子阱InGaAs / InGaAsP / InP二极管激光器的温度依赖性
4. Investigation of InGaAsP transition layers for aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers [C] . Hung-Pin Shiao, Wei Lin . 1994

机译：无铝InGaAs / GaAs / InGaP应变量子阱激光器的InGaAsP过渡层研究
5. Fabrication of high power aluminum: Free 0.8 micron to 1.0 micron InGaAsP/InGaP/GaAs lasers for optical pumping [D] . Diaz, Jacqueline Estela 1997

机译：高功率铝的制造：用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation [O] . Mawst, Luke J., Bhattacharya, Arnab, Nesnidal, Michael P., 1995

机译：高连续波输出功率InGaas / InGaasp / InGap二极管激光器：衬底误取向的影响
8. Theoretical Investigation of Minority Carrier Leakages of High-Power 0.8Micrometer InGaAsP/InGaP/GaAs Laser Diodes [R] . Diaz, J., Eliashevich, I., Yi, H., 1994

机译：大功率0.8微米InGaasp / InGap / Gaas激光二极管少数载流子漏电的理论研究

Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

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