首页>
外国专利>
METHOD OF MEASURING DEFECT DENSITY OF SEMICONDUCTOR CRYSTAL AND METHOD OF MEASURING DEFECT DENSITY OF HALF-INSULATING GAAS CRYSTAL
METHOD OF MEASURING DEFECT DENSITY OF SEMICONDUCTOR CRYSTAL AND METHOD OF MEASURING DEFECT DENSITY OF HALF-INSULATING GAAS CRYSTAL
展开▼
机译:半导体晶体的缺陷密度的测量方法和半绝缘气体晶体的缺陷密度的测量方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To achieve a measurement of a defect density at a high accuracy even when a semiconductor crystal to be measured is thin. ;SOLUTION: A half-insulating GaAs single crystal is irradiated with exciting light having energy under a band gap energy (specifically, energy within a range of 1.40eV-1.47eV) while the intensity of the luminescence light emitted from the GaAs crystal associated with a two-stage excitation process phenomenon of the GaAs crystal is measured to accomplish the measurement of an EL2 density as proper defect density in the GaAs crystal. This measuring method does not employ the conventional lattice defect density measuring method by light absorption. This enables the measurement of a defect density at a high accuracy even when the semiconductor crystal to be measured is thin.;COPYRIGHT: (C)1997,JPO
展开▼