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Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode

机译：使用具有缺陷模式的光子晶体的方法测量非平衡载体浓度及其寿命的方法

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B. Chernyshov; R. Golovaschenko; V. Derkach; S. Tarapov;
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2. A contactless method for measuring the lifetimes of nonequilibrium charge carriers in semiconductors [J] . N. B. Radchuk, A. Yu. Ushakov Instruments and Experimental Techniques . 2003,第3期

机译：用于测量半导体中非平衡电荷载流子寿命的非接触方法
3. Investigating non-equilibrium carrier lifetimes in nitrogen-doped and boron-doped single crystal HPHT diamonds with an optical method [J] . Y. Song, B. D. Peng, Z. Song, Applied Physics Letters . 2018,第2期

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4. Free electron laser studies of carrier lifetime and lifetime design in semiconductors and ionic crystals [C] . Carl R. Pidgeon, Heriot-Watt Univ., Edinburgh Scotland, Conference on terahertz spectroscopy and applications . 1999

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5. MINORITY CARRIER KINETICS IN DEFECT TRAP DISTRIBUTIONS IN SEMICONDUCTORS: APPLICATION TO TRIGONAL SELENIUM SINGLE CRYSTALS. [D] . SWINEHART, PHILIP ROSS. 1974

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6. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging [O] . K. Alberi, B. Fluegel, H. Moutinho, -1

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7. Identifying defect-tolerant semiconductors with high minority carrier lifetimes: Beyond hybrid lead halide perovskites [O] . Brandt, Riley E., Stevanović, Vladan, Ginley, David S., 2015

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8. Method and apparatus for measuring minority carrier lifetime in a direct band-gap semiconductor [R] . 1987

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Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode

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