Plasma chemistry study of plasma ion implantation doping for CMOS devices

摘要

Plasma ion implantation (PII) doping processes utilizing PH_3/He and B_2H_6/He plasmas to fabricate CMOS devices are presented. The impact of plasma chemistry of PII on device structure and characteristics are studied. By using an optimized process condition, low contamination levels and good device characteristics have been achieved.