Effect of $hbox{B}_{2}hbox{H}_{6}$ Plasma Doping on the Shallow Trench Isolation in CMOS Image Sensor Device

摘要

We evaluate the electrical and optical properties of a complementary metal–oxide–semiconductor (CMOS) image sensor with shallow trench isolation (STI) sidewall doped by plasma-doping (PLAD) method using $hbox{B}_{2}hbox{H}_{6}$. PLAD can be used to fabricate an STI sidewall junction depth shallower than that fabricated using conventional beamline ion implantation. The use of $hbox{B}_{2}hbox{H}_{6}$ for the STI sidewall doping by PLAD facilitates the concurrent doping of numerous hydrogen atoms around the STI sidewall, thus improving the optical properties, such as temporal noise, crosstalk, and saturation, of the 1.75-$mu hbox{m}$ pixel CMOS image sensor. Although the dark current performance was slightly degraded, it could be improved under more heavily doped conditions.