Plasma doping device, plasma doping method, production method, and semiconductor device of semiconductor device

摘要

Topic At the time of doping, as the damage for the suffering processing baseplate is decreased, the plasma doping device which can process uniformly is offered.SolutionsPlasma doping device 31, the processing container inside 32 which inside that makes the dopant the suffering processing baseplate fill and processing container 32 the doping gas and gas supply section is arranged inside 33 which supplies the inert gas for plasma excitation and processing container 32, bias electric power supply possible high frequency power source has with the control section 28 which controls 58 and plasma doping device 31 in the plasma generator 39 which generates the plasma inside processing container 32 of the support stand making use 34 which supports suffering processing baseplate W on that and microwave, and support stand 34. Here, control section 28, in order for ion energy of the dopant to be under 100eV, controls the bias electric power which is supplied with high frequency power source 58. Selective figure Figure 2