Charge Trapping and Hysteresis Behavior in ReS_2/SiO_2 and ReS_2/hBN Field Effect Transistors

摘要

Rheniumdisulfide (ReS_2) based field-effect transistors (FETs) are of substantialinterestin optoelectronic applicationsdue toadirect bandgap even initsmulti-layers.Thin filmsof ReS_2are subject to the deteriorationofcharged impurities and trapsin substratesimilarlyto other atomically-thin films, which causeseveredegradation of FETcharacteristicssuch ascarrier mobility,threshold voltage instability and hysteresisin Ⅰ-Ⅴ curves.In thiswork, we report themitigation of suchdegradationin ReS_2/SiO_2 devices by substituting the substrate by a high-qualityhexagonal boron nitride(hBN)insulating substratewhich is atomically flat and free of charge trappingsites.