SiC MESFET and MMIC Technology Transition to Production

摘要

Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semi-insulating (HPSI) 4H-SiC substrates. MESFETs operating over 5000 at a T_J =140 ℃ with no degradation are presented. Over two thousand high power SiC MMIC amplifiers have been fabricated with excellent yield and repeatability using our released second generation MMIC foundry process.