Production of transition region between a trench (3) and a semiconductor useful in semiconductor and transistor technology

摘要

Production of transition region between a trench (3) and a semiconductor region adjacent to it in a trench/semiconductor component by:application of an oxide barrier layer (15) on the upper part (UP) of the trench inner wall, and production of a first oxidation layer (7) on a lower part (U) of the inner wall not coated by the oxidation barrier layer (15) by thermal oxidation of this uncoated part. An independent claim is included for a trench/semiconductor component (1).