Non-volatile (sic) resistive storage cell with solid electrolyte matrix between first and second electrode as active layer useful in semiconductor technology has elements from groups IVb and Vb and transition metals in active layer

摘要

Non-volatile (sic) resistive storage cell with solid electrolyte matrix (300) between first (100) and second (200) electrode as active layer. Active layer includes first, second and third layers, where first and third layers (300a and 300c) have composition MmX(1-m) and Mm'X(1-m') respectively, where M = element selected from groups IVb and Vb and transition metals, X and Y = O, S, Se or Te and m and m' =0-1. INDEPENDENT CLAIM is included for preparation of storage cell involving deposition of a dielectric layer on first electrode. Second layer (300b) is formed from Z-chalcogenide compound, where one of electrodes can be Z-chalcogenide compound, where Z = Ag, Cu, Sn, Na, Li, or K.