2–8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology

摘要

Design approach and test data for a two-octave bandwidth HPA developed using GaAs based multifunction self aligned gate metal semiconductor field effect transistor with multilevel plating monolithic microwave integrated circuit (MMIC) technology are presented. A low loss matching design technique was used in the development of a two-stage power amplifier. The broadband amplifier has exhibited 8W power output and better than 16% PAE over the 2.0–8.0 GHz frequency range. To our knowledge, these results represent the state-of-the-art in output power for multi-octave S/C-band power MMIC amplifiers.