Ku-band MMIC Power Amplifiers Developed Using MSAG MESFET Technology

摘要

This article presents the design approach and test results of 1, 1.5, 2 and 5 W, Ku-band MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and balanced topologies were used. A minimum power-added efficiency (PAE) of 27 percent, an output power (P_(out)) of 5 W and an associated gain of 21.5 dB were achieved over the 12.5 to 14.5 GHz frequency range. To the author's best knowledge, these results represent the state-of-the-art in MESFET-based MMIC Ku-band power amplifiers.