Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography

摘要

Abstract: this paper describes a novel resist material for i-line or deep uv lithography, consisting of imidazoylsulfonyl-naphthoquinonediazide (IPAC) and co(p-tert.-butylphenol-Bisphenol A)-formaldehyde resin (PBR). Along with the resist material comprising IPAC and PBR, another resist material of which matrix resin is substituted with a chemically modified polyvinylphonol (MPVP) is also presented. PBR and MPVP are considerably transparent at i-line and deep uv regions.!