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Enhanced interconnects through filled metal structures

机译:通过填充金属结构增强互连

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摘要

This paper analyses use of solid metal fill between BGA balls or LGA pins of packages, and between die bumps. The basic principle is to benefit from higher metal-density per unit volume of the substrate in the current path to deliver enhanced electrical, thermal and mechanical performance. Paper conceptualizes different structures and simulated data is presented to show case benefits. Results show power delivery impedance peak reduction by 10 % in the 100 kHz-10 MHz range. In addition, package inductor benefit of 40 % lower DC resistance is reported.
机译:本文分析了固体金属填充在封装的BGA球或LGA引脚之间以及管芯凸块之间的使用。基本原理是受益于电流路径中基板每单位体积较高的金属密度,以提供增强的电,热和机械性能。论文对不同的结构进行了概念化,并提供了模拟数据以显示案例的好处。结果表明,在100 kHz-10 MHz范围内,功率传输阻抗峰值降低了10%。此外,据报道,封装电感器的直流电阻降低了40%。

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