A new interconnection/transition method using bumping-bridge structure for 1-level package of RF MEMS devices

摘要

A novel 1-level interconnection/transition method for radio frequency micro-electronic-mechanic system (RF MEMS) devices is proposed in this paper. Using bumping-bridge structure which is composed of a chip substrate, a coplanar waveguide (CPW) transmission line fabricated on the substrate and a group of metal bumps set on the ends of the CPW line, this method combines the advantages of both flip-chip and through-silicon via (TSV) techniques. The results of the finite element method (FEM) analysis show that this interconnection/ transition structure has good characteristics of return loss and insertion loss over a broad frequency range compared with both TSV and wire-bonding structures.