An Investigation on Modeling and Statistical Simulation of SiGe Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

摘要

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier mobilities and saturation velocities have been found in Ⅲ-Ⅴ compound materials, for instance GaAs, AlGaAs, and InP. The project undertaken has utilized a novel methodology to achieve enhanced circuit designs using a multiple statistical simulation approach. This methodology has been described in detail elsewhere. The goal of this project is to extend this methodology to characterize SiGe HBTs and elucidate their dependence on germanium content.