Simulation of effects of emitter and collector widths on performance of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs)

摘要

The effects of the emitter and intrinsic collector widths on the direct-current (DC) current gain (beta(F)), cutoff frequency (f(T)), and maximum oscillation frequency (f(MAX)) of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) have been investigated using energy balance (EB) and drift-diffusion (DD) models in the SILVACO technology computer-aided design software. The EB and DD carrier transport models are presented. The base thickness of the simulated SiGe HBTS is 15 nm. The results for different widths are presented and analyzed.