Phase Defect Inspection of 130 nm Node Phase Shift Masks Using a Simultaneous Transmitted and Reflected Light Pattern Inspection Algorithm

摘要

Phase shifting mask technology will be necessary to produce integrated circuits at the 130 nm node using KrF wavelength steppers. In order to successfully accomplish this goal, it is necessary to detect and repair phase shifting defects that may occur in the manufacture of these reticles. An inspection algorithm has been developed to improve the phase shift defect detection rate of an UV reticle inspection system and is based upon the simultaneous use of the transmitted and reflected light signals. This paper describes the phase defect sensitivity improvement over transmitted light only pattern inspection results and simultaneous transmitted and reflected light based contamination inspection results.