首页> 外国专利> Defect inspection method for phase shift mask and defect inspection apparatus for same

Defect inspection method for phase shift mask and defect inspection apparatus for same

机译:相移掩模的缺陷检测方法和相同的缺陷检测装置

摘要

Preparing an EUV mask including a multilayer thin film mirror and a phase shift mask on the multilayer thin film mirror, disposing a phase shift thin film on the EUV mask, a light source unit said irradiating a phase shift thin film and a first extreme ultraviolet (EUV) light to the EUV mask, collecting the second EUV light reflected from the EUV mask by a detector, and a determination unit including the first EUV light and the second EUV light Comparing the intensity of EUV light, there may be provided a method for inspecting whether a phase shift mask is good or bad, including determining a phase defect in the phase shift mask.
机译:制备包括多层薄膜镜和多层薄膜镜上的相移掩模的EUV掩模,在EUV掩模上设置相移薄膜,光源单元表示照射相移薄膜和第一极端紫外线( EUV)光到EUV掩模,通过检测器收集从EUV掩模反射的第二EUV光,以及包括第一EUV光和第二EUV光的确定单元比较EUV光的强度,可以提供一种方法 检查相移掩模是否良好或坏,包括确定相移掩模中的相位缺陷。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号