Manufacturing technology of microelectronic devices

摘要

The invention relates to a method for manufacturing a microelectronic device from a semiconductor substrate on an insulator, which comprises an active element (23) formed in an active region of the substrate (10) separated by an insulating groove and defined by a first side wall (19b),Since the insulating trench is at least partially filled with a first dielectric material, the process includes: chemically etching the passive part (21) at the first bottom of the insulating trench to produce The secondary average value of roughness is between 2 nm and 6 nm, which is a step of passive component formation (27),At the top of the first dielectric material and at the protrusion of the passive part (21).Abstract figure: figure 23.