Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;
University of Electronic Science and Technology of China,Chengdu 610054,China;
School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;
silicon carbide(SiC); power semiconductor devices; superjunction(SJ); process development;