Charge trapping non-volatile memory device and method of fabricating the same and method of operating the charge trapping non-volatile memory device

摘要

The charge trap nonvolatile memory device includes a source region and a drain region spaced apart from each other by a first trapping region, a channel region, and a second trapping region in an upper region of a substrate, and a gate disposed on the substrate in the channel region. a stack, a first tunnel insulating layer, a first charge trapping layer, and a first blocking insulating layer disposed over the substrate in the first trapping region; a second tunnel insulating layer disposed over the substrate in the second trapping region; 2 The charge trap layer and the second blocking insulating layer, the interlayer insulating layer disposed on the substrate to cover the gate stack, and the first and second contacts passing through the interlayer insulating layer to contact the source region and the drain region, respectively The plug and a third contact plug passing through the interlayer insulating layer to contact the upper surface of the gate stack and overlap the first charge trap layer of the first trapping region and the second charge trap layer of the second charge trapping region includes