Method for manufacturing silicon wafer with laser mark and silicon wafer with laser mark

摘要

After the polishing treatment, a silicon wafer having no protrusions around the dots constituting the laser mark is manufactured. A laser mark printing process that prints a laser mark having a plurality of dots on a silicon wafer, an etching process that performs an etching process on at least the laser mark-printed area of the silicon wafer, and polishes the surface of the silicon wafer after the etching process. It includes a polishing step of performing treatment. In the laser mark printing step, a first step of forming a first portion of a dot by irradiating each of the plurality of dots with a laser light at a predetermined position of an outer peripheral portion of a silicon wafer with a first beam diameter, and a laser light It is formed by a second step of forming a second part of a dot by irradiating a second beam diameter with a second beam diameter smaller than the first beam diameter to a predetermined position, and in the first step, the first part is the first part after the polishing step It is done so that at least a part of it has the remaining depth.