METHOD FOR MANUFACTURING SILICON WAFER WITH LASER MARK, AND SILICON WAFER WITH LASER MARK

摘要

The present invention manufactures a silicon wafer that has no elevated portion at peripheral edges of dots constituting a laser mark after polishing processing. This method comprises: a laser mark printing step for printing a laser mark having a plurality of dots on a silicon wafer; an etching step for performing etching processing on at least a region where the laser mark is printed of the silicon wafer; and a polishing step for performing polishing processing on the surface of the silicon wafer after the etching step. In the laser mark printing step, each of the plurality of dots is formed by a first step for forming a first portion of the dot by irradiating a predetermined position of an outer peripheral portion of the silicon wafer with a laser beam having a first beam diameter, and a second step for forming a second portion of the dot by irradiating the predetermined position with a laser beam having a second beam diameter smaller than the first beam diameter, and the first step is performed such that the first portion has a depth at which at least part of the first portion is left after the polishing step.