Semiconductor device comprising N-channel and P-channel transistors and production method

摘要

A semiconductor device complementary circuit comprises an n-channel transistor (ON) using a two-dimensional electron gas (27) and a p-channel transistor (Qp) using a two-dimensional hole gas (28). The device comprises: a semi-insulating GaAs substrate (11); a channel layer (12) of i-type GaAs having n--type source and drain regions (18 and 19) and p+-type source and drain regions (20 and 21); a buffer layer (13) of i-type AlGaAs preventing carriers from passing through it; and, first and second control layers (14 and 15) of GaAs and/or AlGaAs having n-type or p-type conductivity. These layers are epitaxially formed in sequence on the substrate (11) by an MBE method or an MOCVD method. Metal electrodes (16, 17, 23 to 26) are formed on the first and second control layers (14 and 15), n+-type regions (18 and 19) and p"-type regions (20 and 21).