首页> 外国专利> SEMICONDUCTOR INTEGRATED CIRCUIT

SEMICONDUCTOR INTEGRATED CIRCUIT

机译:半导体集成电路

摘要

PURPOSE:To prevent a circuit interference from occurring by a method wherein a third electronic circuit region, which does not operate in conjunction with other first and second electronic circuit region, is provided between the first and the second electronic circuit region which operate simultaneously. CONSTITUTION:An FM front end block, an FM-IF block, and an AM turner block are formed on regions 21-23, respectively, where the region 23 surrounds the region 21 and the region 22 is provided to the periphery of the region 23. The region 23 stops operating when the regions 21 and 22 are in operation. Therefore, the region 23 becomes high in impedance, so that the interference between the regions 21 and 22 can be prevented. The AM tuner block itself functions as a huge capacitor, and even if high frequency noises originated from the regions 21 and 22 penetrate into a semiconductor substrate 27, they are absorbed in a power line 28 as the capacitor is provided between the regions 21 and 22, and consequently circuit interference can be prevented.
机译:目的:为了防止通过在其中同时工作的第一和第二电子电路区域之间提供不与其他第一和第二电子电路区域一起工作的第三电子电路区域的方法发生电路干扰。组成:分别在区域21-23上形成FM前端块,FM-IF块和AM调谐器块,其中区域23围绕区域21,区域22设置在区域23的外围当区域21和22在操作中时,区域23停止操作。因此,区域23的阻抗变高,从而可以防止区域21和22之间的干扰。 AM调谐器块本身起着巨大的电容器的作用,并且即使来自区域21和22的高频噪声渗透到半导体衬底27中,当电容器设置在区域21和22之间时,它们也被电力线28吸收。 ,因此可以防止电路干扰。

著录项

  • 公开/公告号JPH0249462A

    专利类型

  • 公开/公告日1990-02-19

    原文格式PDF

  • 申请/专利权人 SANYO ELECTRIC CO LTD;

    申请/专利号JP19880200555

  • 发明设计人 IMAI TOSHIAKI;

    申请日1988-08-10

  • 分类号H01L21/761;H01L21/822;H01L27/02;H01L27/04;H04B1/10;H04B15/02;

  • 国家 JP

  • 入库时间 2022-08-22 06:23:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号