SELF-DOPED HIGH-PERFORMANCE PHASE-COMPLEMENTARY HETEROJUNCTION FIELD-EFFECT TRANSISTOR

摘要

PURPOSE: To obtain a high packing density by constituting a heterojunction field-effect structure which has longitudinal stack field-effect devices. ;CONSTITUTION: More than one device which has electrically independent source and drain regions is formed, and a one gate electrode 17 controls the flows of currents in the respective devices. Respective longitudinally stacked FETs have electrically insulated channel regions 12 and 14, which are controlled by the one gate electrode 17. The longitudinally stacked devices are give larger packing density of the devices. Consequently, high packing density can be obtained.;COPYRIGHT: (C)1993,JPO