SUBSTRATE FOR HETEROJUNCTION FIELD-EFFECT TRANSISTOR, METHOD OF MANUFACTURING THE HETEROJUNCTION FIELD-EFFECT TRANSISTOR, AND THE HETEROJUNCTION FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a heterojunction field-effect transistor by which a desired recess etching depth can be stably obtained, and to provide the heterojunction field-effect transistor.;SOLUTION: There is disclosed a substrate for the heterojunction field-effect transistor which includes growth inhibiting layers 15, with each being provided on a surface of a portion of the substrate. A group-III nitride semiconductor layer 14 is set on the substrate for the heterojunction field-effect transistor, in such a way that a thickness T1 is equal to a recess etching depth; then a part of the group-III nitride semiconductor layer 14 exposed in an opening of a photoresist mask 27 is subjected to plasma-etching, until components of the growth inhibiting layer is detected. As a result, desired recess etching depth can be stably obtained.;COPYRIGHT: (C)2011,JPO&INPIT