TRENCHED DMOS TRANSISTOR WITH CHANNEL BLOCK AT CELL TRENCH CORNERS

摘要

A kind of trench dmos transistor has improved equipment performance and productivity. (that is, in two grooves, the main surface for being covered in integrated circuit substrate has blocks photoresist layer in source region injection step to prevent (block) channel from forming corner regions in this regard to the trench corner of this cell during fabrication. It is improved to eliminate punch-through and reliability, while source/drain conducting resistance only slightly increases. Block trench corner creation notch features in each trench corner, thus source region may not extend to the trench corner, but extend to trench corner below doped body region on the contrary.