The present invention relates to a method of forming a polysilicon film used as a resistance of a semiconductor device, the method comprising: forming a pad oxide film (12) on a semiconductor substrate (10); Forming a polysilicon film (14) on the pad oxide film (12); Forming an oxide film (16) on the polysilicon film (14); A high temperature heat treatment of the polysilicon film having the above-described structure, wherein the high temperature heat treatment is performed for about 1 hour under an N 2 gas atmosphere at a temperature of about 1100 ° C. As described above, according to the method for forming the polysilicon film of the present invention, the particle size of the polysilicon film used as the resistance is maximized to keep the amount of activated ions constant and to suppress the fluctuation of trapped charges to maximize the dispersion. A polysilicon film that can be reduced can be formed.
展开▼
