Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure, and a semiconductor device having a polysilicon layer with a multi-layer WSix film formed thereon

摘要

A method of forming a semiconductor device with a polysilicon layer having a multi-layer tungsten-silicide (WSi_x) film formed on a surface thereof includes the steps of (1) forming a first layer of tungsten-silicide on the surface of the polysilicon layer; (2) forming a second layer of a material selected from tungsten and silicon on the first layer; (3) forming a third layer of tungsten-silicide on the second layer; and (4) thermally treating the multi-layer film resulting from steps (a)-(c) to form a multi-layer WSi_x film on the surface of the polysilicon layer, the multi-layer WSi_x film having a uniform small grain size. In various embodiments, steps (1)-(3) may be repeated one or more times. A semiconductor device includes a semiconductor body having a polysilicon layer formed on a surface thereof and a multilayered WSi_x film formed on a surface of the polysilicon layer by the process described above.